EpiGaN to Supply OMMIC with GaN/Si Material for its New 150mm RF Power Product Line

OMMIC GaNFollowing the inauguration of Europe’s first 150mm GaN production line at OMMIC, EpiGaN and OMMIC today announced their partnership for GaN/Si epiwafers supply for RF power products aiming at future 5G wireless communication.

EpiGaN is a global supplier of GaN-on-Si and GaN-on-SiC material solutions for advanced electronic products, and OMMIC, is a key provider of compound semiconductor MMICs and foundry services. They are collaborating to develop RF GaN/Si technology on 150-mm diameter wafers. They have jointly collaborated on establishing a production process based on EpiGaN’s differentiating GaN/Si material technology with in-situ grown SiN passivation. They will cooperate directly to move this technology to 150-mm diameter wafers, targeting future 5G wireless communication standards, for which OMMIC last week announced a large project with a 5G equipment supplier.

The advent of the 5G era is going to revolutionize long-distance communications. To provide users with exceptionally high-speed wireless connections, ultra-low latency and enhanced mobile broadband, a new semiconductor technology – GaN – is required in applications such as multimedia streaming, autonomous driving, machine-to-machine communication with billions of interconnected sensors or Internet-of-Things, to transmit and receive RF signals in the utmost efficient way.

The next-generation 5G standard will require GaN as an enabling semiconductor technology to provide a step-up in performance. EpiGaN offers many attractive USPs for RF power, which add value to device designers, such as in-situ SiN passivation for enhanced device robustness, or very low RF losses up to 100 GHz. The high-frequency capability of their material, will enable cost-efficient and energy-efficient GaN technology for the higher frequency bands targeted by 5G.

This partnership will enable OMMIC to meet the required volume and quality levels for our 5G GaN MMICs.

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