China’s First Pure-wafer Foundry Acquires a Plasma Etch Solution for its New 6-Inch GaN on SiC Manufacturing Line

Wafer EtchChengdu HiWafer Semiconductor Co., Ltd (HiWafer), China’s first pure-wafer foundry has placed an order for SPTS Technologies Omega® plasma etch system to establish their new gallium nitride (GaN) on silicon carbide (SiC) production line. SPTS’s Synapse™ and ICP process modules on an Omega c2L platform will etch SiC backside vias (BSV) and GaN epitaxial layers to manufacture high power radio frequency (RF) devices. The Omega system was selected over the competition because the Synapse provided superior SiC etch rates while the ICP module delivered improved selectivity for GaN etch. 
 
HiWafer is a well-established Chinese foundry and producer of gallium arsenide based pHEMT and HBT RF devices currently used in 4G communication. They are also an early adopter of SiC and GaN materials for use in high-end RF devices that target the worldwide 5G protocol.

This leadership position is important to them as Power and RF applications are high on the ‘Made in China 2025’ agenda for promoting domestic production of semiconductor devices, and companies like HiWafer are well-positioned to contribute to realizing this national initiative. Their leadership in high rate etching of SiC and other dielectric materials will enable them to provide manufacturing solutions for the coming 5G wave.

The addition of SPTS’s Omega plasma etch system will give HiWafer the tools to compete in GaN on SiC RF technology in telecoms and transportation applications, including railway systems. Click here to learn more about the Omega Plasma System.