UMS GaN Enabled HEMT Technology Now Cleared for Space Applications by European Space Agency

The GH25-10 MMIC GaN HEMT technology from UMS has been successfully evaluated for space applications and has become a part of the European Preferred Part list (EPPL) established by the European Space Agency (ESA). The reliability study and ESCC evaluation of the technology has been supported by ESA, French MoD and CNES.

The GaN 0.25 µm HEMT process is optimized for high power applications up to 20 GHz. Its good HEMT noise performance also allows LNA design. The MMIC process includes, precision TaN resistors, high values TiWSi resistors, MIM capacitors, inductors, air-bridges, via-holes through the substrate and two metal layers for interconnection.

Element Typical Value:

  • Power density: 4.5 W/mm
  • Vt: -3.5V
  • Idss: 0.86 A/mm,
  • Ids+: 1 A/mm
  • Gm: 290 mS/mm.
  • Vbds: >100 Volts
  • VdsDC: 30 V
  • Ft: 30 GHz
  • Fmax: Above 50 GHz
  • MIM density: 255 pF/mm2
  • Metallic resistors: 30 and 1000 Ohms/sq.
  • Via-holes: Available on 100 µm substrate thickness.
  • Wafer size Thickness: 100 µm / Diameter: 100 mm

The GH25 Design Kits are available on ADS from Keysight and MwO from NI-AWR for foundry projects. They offer non linear scalable electro-thermal models and a 3D stack for EM simulation & DRC capability.

UMS (United Monolithic Semiconductors) designs, produces, and markets radiofrequency, microwave, and millimeter wave components and integrated circuits for the telecom, space, defense, automotive, and ISM Industries. The company also offers MMICs for wireless communication applications, such as broadband wireless, VSAT, high data rate communications.