Ampleon to Showcase its LDMOS RF Transistors for Radar, Communications and RF Energy at IMS 2018

At the IEEE MTT International Microwave Symposium (IMS) to be held in Philadelphia, Pennsylvania, USA from 10-15 June, Ampleon will be showcasing its latest technologies and solutions. These will include the launch of a new generation of broadcast products with an emphasis on efficiency, a complete portfolio of radar products based on the latest generation of LDMOS and the world’s best performing LDMOS transistors and modules for RF Energy applications. Innovation solutions for Mobile Broadband networks that offer the best compromise of efficiency, cost and size together with the latest innovations of Extremely Rugged High Power Transistor for industrial, medical and scientific markets will also be on display.

Ampleon staff will present a number of technical papers during the course of the event as listed below:

  • Tuesday, June 12 - Rugged Characterization of Bonding Wire Arrays in LDMOSFET-based Power Amplifiers by the Shanghai Development Team Leader, Levin Lin
  • Wednesday, June 13 - Optimized DPD Feedback Loop for m-MIMO sub-6 GHz Systems by RF Innovation Engineer, Andre Prata
  • Friday, June 15 - Power Amplifier Implementation Challenges in Front-Ends for 5G mobile broadband by Advanced Concepts and Systems Group Leader, Sergio Pires
  • Friday, June 15 - Synthesis of Advanced Doherty Amplifier Combiners by Vice President Application and Portfolio Management, John Gajadharsing

The time and location of these presentations will be provided onsite.

Click here to see more IMS 2018 related news.


  • Country: Netherlands
More News From Ampleon

Featured News