Fully-Matched, GaN on SiC RF Power Transistor for C-band, Continuous Wave Applications

Integra Technologies has released a new fully-matched, gallium nitride on silicon carbide (GaN on SiC), RF power transistor for C-band, continuous wave (CW) applications. The new, IGT5259CW25 power transistor, is fully matched to 50-ohms, operates at the instantaneous frequency range of 5.2 to 5.9 GHz, and offers a minimum of 25 Watts of output power at a 36V drain bias. It features 12 dB of gain, and 48% efficiency at CW conditions. (Negative gate voltage and bias sequencing are required when utilizing this transistor.)

Highlights of the IGT5259CW25 C-Band Radar 50Ω Transistor Includes:

  • GaN on SiC HEMT Technology
  • POUT-PK = 25W @ CW/36V
  • 5.2-5.9GHz Instantaneous Operating Frequency Range
  • 50Ω Internally Impedance Matched Device
  • Depletion Mode Device
  • Negative Gate Voltage and Bias Sequencing Required
  • Metal Based Package Sealed With Ceramic-Epoxy Lid
  • Gold Metallization System: Chip - Wire Bond – Package
  • Package Size: W=0.800″(20.32mm), L=0.400″(10.16mm)
  • 100% High Power RF Tested in 50Ω RF Test Fixture

Click here to learn more about this Transistor. Integra Technologies will be at IMS 2018 in Philly next month - Click here for more updates on IMS 2018.