WIN Integrates High Performance 0.1um GaAs pHEMT With Monolithic PIN and Vertical Schottky Diodes

WIN Semiconductors has expanded its portfolio of highly integrated GaAs technologies with the release of a new pHEMT technology. The new PIH0-03 platform incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1um pseudomorphic HEMT process, PP10.

The integrated technology, PIH0-03, adds a highly linear vertical Schottky diode with cut-off frequency over 600 GHz, as well as multi-function PIN diodes while preserving the state-of-the-art mmWave performance of the PP10 technology. The availability of monolithic PIN and Schottky diodes with a high performance mmWave transistor enables on-chip integration of a wide range of functions, including mixers, temperature/power detecting, limiters, and high frequency switching, and supports power, low noise and optical applications through 100 GHz.

The technology provides users with multiple pathways to add on-chip functionality and reduce the overall die count of complex multi-chip modules used in a variety of end-markets. In addition to high frequency switching, the monolithic PIN diodes can be used for low parasitic capacitance ESD protection circuits, and as an on-chip power limiter to protect sensitive LNAs in phased array radars. The vertical Schottky diodes enable numerous detecting and mixing functions and can be combined with the PIN diodes in unique limiter applications.

WIN Semiconductors Corp at IMS 2018

WIN Semiconductors Corp. is showcasing its compound semiconductor RF and mm-Wave solutions in booth 415 at the 2018 International Microwave Symposium in Philadelphia, PA being held from June 12-14, 2018.

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