New GaN on SiC RF Power Modules Help Simplify Radar Amplifier Design

Integra Technologies has recently introduced a new line of standardized GaN/SiC RF power modules (aka Pallets). These ultra-efficient RF Power Modules are being developed to offer a new level of integration which results in powerful yet simple, higher-level building blocks for creating SWaP-C optimized high power amplifiers (HPAs) found in pulsed and CW radar systems.

Built-in functions can include RF matching, gate-pulsing and sequencing (GPS), output noise suppression, temperature compensation, and VSWR protection. Integra’s RF power modules are available in a variety of RF bands, and future standard and semi-custom solutions will be built around Integra’s commitment to push their advanced gallium nitride on silicon carbide (GaN-on-SiC) 50-ohm RF Power Transistor technology up to X-band territories. Standard RF Power Modules currently offer output power up to 2400 W, and efficiencies up to 70%. Unique footprints and packaging approaches are available. Click here to view the these GaN RF Amplifier from Integra Technologies.