Mitsubishi Develops Digitally Controlled GaN Amplifier for 5G Mobile Base Stations

Mitsubishi has developed the first ultra-wideband digitally controlled gallium nitride (GaN) amplifier, which is compatible with a world-leading range of sub-6GHz bands focused on fifth-generation (5G) mobile communication systems. With a power efficiency rating of above 40%, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations.

The Amplifier features a novel load modulation achieves wideband operation and contributes to large-capacity communication. Mitsubishi Electric's novel ultra-wideband digitally controlled GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier's high-efficiency operation, for wideband (1.4 - 4.8 GHz) operation.

It also has a digital control that realizes high-efficiency operation and reduces power consumption of mobile base stations. Digitally controlled input signals for amplifier realize high-efficiency load modulation of above 40% over 110% of the fractional bandwidth. Digital control employs learning function based on Maisart (Mitsubishi Electric's AI creates the State-of-the- ART in technology). Maisart encompasses Mitsubishi Electric’s proprietary artificial intelligence (AI) technology, including its compact AI, automated design deep-learning algorithm and extra-efficient smart-learning AI. The Improved efficiency of amplifier helps to reduce power consumption in mobile base stations.

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