Interesting 5G & mm-Wave Technical Sessions at IMS 2019

IMS 2019, one of the world’s largest gathering of RF and Microwave experts is set to take place from June 4-6 in the city of Boston. Hosted by the IEEE Microwave Theory and Techniques Society, the event this year will be focusing on the technical approaches towards 5G introduction, advancements in mm-wave, IoT and defense. The event offers an exhibition, workshops and demonstrations, and a number of technical sessions conducted by leading industry experts as well as technical paper presentations. mm-Wave and 5G, in particular, are key topics this year with major industry players discussing the possible future deployments and use cases.

Here is a list of some important technical sessions on mm-Wave and 5G:

Chair: Farshid Aryanfar, Peregrine Semiconductor

Co-Chair: Jon Comeau, Anokiwave

Location: 156AB

Abstract: This session will present latest development on various aspects of mm-Wave technologies to enable 5G communication. It starts with a discussion on predistortion at array level and follow up with presenting phased array performance at 5G primary bands (28 and 39 GHz) and we conclude the session by a tri-band transmitter covering cellular and Wi-Fi mm-wave bands.

Technical Papers:

  1. Single-Input Single-Output Digital Predistortion of Multi-User RF Beamforming Arrays (08:00 - 08:20) A.M.
  2. 5G mm-Wave Link Range Estimation Based on Over-The-Air Measured System EVM Performance (08:20 - 08:40) A.M.
  3. A 37–42GHz 8×8 Phased-Array for 5G Communication Systems with 48–50 dBm EIRP (08:40 - 09:00) A.M.
  4. 2×64 Dual-Polarized Dual-Beam Single-Aperture 28GHz Phased Array with High Cross-Polarization Rejection for 5G Polarization MIMO (09:00 - 09:20) A.M.
  5. Multi-Gbps Tri-Band 28/38/60-GHz CMOS Transmitter for Millimeter-Wave Radio System-on-Chip (09:20 - 09:40) A.M.

Chair: Adrian Tang, University of California, Los Angeles

Co-Chair: Joachim Oberhammer, KTH

Location: 157BC

Abstract: This session presents recent advances in mm-wave and THz systems from 60 GHz to 500 GHz for communication and sensing applications.

Technical Papers:

  1. A Low-Power FSK/Spatial Modulation Receiver for Short-Range mm-Wave Wireless Links (08:00 - 08:20) A.M.
  2. 207–257GHz Integrated Sensing Readout System with Transducer in a 130-nm SiGe BiCMOS Technology (08:20 - 08:40) A.M.
  3. A Broadband Dual-Polarized Terahertz Direct Detector in a 0.13-µm SiGe HBT Technology (08:40 - 09:00) A.M.
  4. A 6-mW-DC-Power 300-GHz CMOS Receiver for Near-Field Wireless Communications (09:00 - 09:20) A.M.
  5. A 220GHz Dual Channel LNA Front-End for a Direct Detection Polarimetric Receiver (09:20 - 09:40) A.M.

Chair: William Deal, Northrop Grumman

Co-Chair: Theodore Reck, Virginia Diodes

Location: 157BC

Abstract:  Technology capabilities of advanced silicon-based and III/V processes are rapidly improving and enable transceivers at mm-Wave frequencies. Circuit techniques and technology demonstration will be presented in this session.

Technical Papers:

  1. A W-Band Switching Rectifier with 27% Efficiency for Wireless Power Transfer in 65-nm CMOS (10:10 - 10:30) A.M.
  2. A WR-3 Band Distributed Frequency Doubler with a Differential Quasi-Cascode Structure (10:30 - 10:50) A.M.
  3. A 90–98GHz 2×2 Phased-Array Transmitter with High Resolution Phase Control and Digital Gain Compensation (10:50 - 11:10) A.M.
  4. A Highly Linear FMCW Radar Chipset in H-Band with 50GHz Bandwidth (11:10 - 11:30) A.M.
  5. Highly-Integrated Low-Power 60GHz Multichannel Transceiver for Radar Applications in 28nm CMOS (11:30 - 11:40) A.M.
  6. A W-Band Transmitter Channel with 16dBm Output Power and a Receiver Channel with 58.6mW DC Power Consumption Using Heterogeneously Integrated InP HBT and Si CMOS Technologies (11:40 - 11:50) A.M.

Chair: Jeong-sun Moon, HRL Laboratories

Co-Chair: Joe Qiu, U.S. ARMY Research Office

Location: 254AB

Abstract: While RF/mmW amplifiers are key elements in modern wireless communications and DoD applications, current RF/mmW amplifier performance has approached near saturation and current practice in amplifier designs requires a trade-off between linearity and efficiency. With 5G on the horizon and DoD RF systems moving to the millimeter-wave regime, novel RF/mmW transistor technologies with extreme linearity and efficiency are highly desirable. This focused session will cover emerging mmW transistor technologies toward 5G wireless applications and DoD applications.

Technical Papers:

  1. Broadband, Linear, and High-Efficiency mm-Wave PAs in Silicon — Overcoming Device Limitations by Architecture/Circuit Innovations (08:00 - 08:20) A.M.
  2. Recent Developments on SiGe BiCMOS Technologies for mm-Wave and THz Applications (08:20 - 08:40) A.M.
  3. Novel High-Speed Linear GaN Technology with High Efficiency (08:40 - 09:00) A.M.
  4. GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers (09:00 - 09:20) A.M.
  5. High Power Density ScAlN-Based Heterostructure FETs for mm-Wave Applications (09:20 - 09:40) A.M.

Chair: James Buckwalter, University of California, Santa Barbara

Co-Chair: Ed Niehenke, Niehenke Consulting

Location: 157BC

Abstract: This session will include papers presenting record results for GaN and InP power amplifiers (PA) as well as new measurement data of PA cells in III-V HEMT technologies at terahertz bands.

Technical Papers:

  1. A 140-GHz 0.25-W PA and a 55–135 GHz 115–135 mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT (10:10 - 10:30) A.M.
  2. 300 GHz Broadband Power Amplifier with 508 GHz Gain-Bandwidth Product and 8 dBm Output Power (10:30 - 10:50) A.M.
  3. A 175GHz Bandwidth High Linearity Distributed Amplifier in 500nm InP DHBT Technology (10:50 - 11:10) A.M.
  4. 190-GHz G-Band GaN Amplifier MMICs with 40 GHz of Bandwidth (11:10 - 11:30) A.M.
  5. Investigation of Compact Power Amplifier Cells at THz Frequencies Using InGaAs mHEMT Technology (11:30 - 11:50) A.M.

To know more about technical sessions at IMS 2019, click here.

To view our coverage of the event, click here.