NXP Launches RF Power Amplifier Modules for 5G Massive MIMO Applications

NXP Semiconductors has announced the availability of its comprehensive RF power multi-chip module (MCM) portfolio supporting the development of massive MIMO active antenna systems for 5G base stations. NXP’s 5G Airfast solutions bring higher levels of integration that reduce power amplifier size, shorten design cycles, and simplify manufacturing. 

The RF power multi-chip modules are 50-ohm, two-stage devices with integrated Doherty that help remove RF complexities, eliminate multiple prototype passes, and improve design predictability. Their pin-compatibility enables design reuse and the reduced component count minimizes testing redundancies while improving yields and decreasing qualification cycle time. 

With a 5x reduction in printed-circuit board size compared to traditional RF designs, NXP’s integrated solutions help tackle the size and weight challenge of high order mMIMO, such as 64T64R that needs to include 64 power amplifiers per antenna. 

The Airfast integrated portfolio includes LDMOS power amplifier modules, GaAs/SiGe pre-driver modules and receiver modules for cellular frequency bands from 2.3 GHz to 3.8 GHz, with output power from 3W to 5 W. 

Power Amplifier Modules: 

Pre-driver modules:

Receiver modules:

  • AFRX5G372 (LNA+switch for 3.5 to 5 GHz bands)   
  • AFRX5G272 (LNA+switch for 2.3 and 2.6 GHz bands)

The power amplifier modules are now available from NXP distributors and etailers. They are supported by NXP’s new RF Circuit Collection, a digital library of over 400 RF power reference circuits. 

NXP demonstrated it's multi-chip module portfolio for cellular base stations in action at European Microwave Week 2019 in Paris.