II-VI Incorporated Wins Best Strategic Partner Award for Supplying SiC Substrates for RF Devices

II‐VI Incorporated, a manufacturer of optoelectronic components for applications in communication, material processing, semiconductor capital equipment, and automotive markets, announced that it has won the Best Strategic Partner Award from Dynax Semiconductor as their supplier of silicon carbide substrates for wireless RF devices.

Dr. Naiqian Zhang, Founder and CEO of Dynax Semiconductor, presented II-VI with the award for its outstanding supplier performance in quality, delivery, and service. II-VI supplies Dynax Semiconductor with semi-insulating silicon carbide (SiC) substrates that enable gallium nitride-on-silicon carbide (GaN-on-SiC) RF power amplifiers deployed in 4G and 5G wireless base stations.

Semi-insulating SiC substrates enable RF power amplifiers for next-generation wireless networks operating over a wide frequency spectrum in the gigahertz range, including in the millimeter-wave bands. II-VI is a leading supplier of SiC substrates, with a strong technology portfolio of 30 active patents and with highly differentiated and proprietary manufacturing platforms and technologies including crystal growth, substrate fabrication, and polishing.

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