UMS GaN & GaAs PDKs for Pathwave ADS Support Enhanced Thermal Capability

RF & mm-Wave solutions expert, United Monolithic Semiconductors (UMS), has announced that the Pathwave ADS PDK for its 0.25µm GaN (GH25) process will now support the new ElectroThermal capability (ETH) offered by Pathwave ADS. This new functionality is not only included for the GH25 GaN PDK but also on the UMS PPH15X-20 GaAs power pHEMT process PDK.

Designing packaged high-power amplifiers is a challenging task. GaAs & GaN devices dissipated high amounts of power in a very small area. As a result of this there are considerable thermal challenges. Device temperature can rise based on CW or pulsed operating conditions, different package materials used or the assembly process used. In addition, the temperature inside the transistor can also impact its properties and performance.

ADS’s Thermal simulation coupled with its Electrical simulation allows for a full and complete analysis of the electro-thermal behavior of the device and the optimization of the MMIC inside its package. It enables users to extract the best performance from the RF GaN devices.

Foundry customers can get the full electro-thermal simulation of their systems by specifying thermal parameters of their own assembly solution. This provides an elegant method to simplify the calculation of the junction temperature which is a critical step of MMIC design assessment. Implementation of thermal data in UMS’ PDKs has been possible thanks to a strong partnership with Keysight experts and development teams. For UMS, this partnership with Keysight is a key element which contributes to its foundry customers’ satisfaction through regular innovative upgrades of the MMIC design tools.

United Monolithic Semiconductors (UMS) designs, manufactures and markets, leading edge RF & millimeter-wave components and solutions for defense, security & space, telecom, automotive and, industrial applications. Its in-house GaAs and GaN technologies offer state-of-the-art performance.