GaN-on-Si-based RF power transistors targeted for 4G LTE and 5G basestation infrastructure must adhere to, uphold and outperform the rigorous reliability testing standards achieved with legacy semiconductor technologies. GaN-on-Si RF power transistor technology has clearly demonstrated this capability, and has shown a clear pathway to support more demanding reliability requirements in the future.

Successful testing of GaN-on-Si has been achieved and documented across a wide range of tests, including Highly Accelerated Stress Tests (HAST), High Temperature Operating Life (HTOL), High Temperature Reverse Bias (HTRB), Accelerated Life Testing (ALT), as well as previously performed, routine testing for Intermittent Operating Life (IOL), Temperature Cycling, Mechanical Shock and Vibration, Destructive Physical Analysis (DPA), and Electrostatic Discharge (ESD).

For a summary analysis of application-specific stress testing methodologies and results demonstrating the reliability of GaN-on-Si RF power transistors for commercial wireless basestation infrastructure, click here.