New RF & Microwave Products

110 W GaN Doherty Power Transistor from 3400 to 3800 MHz

400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications

300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz

400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz

800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz

2.5 kW LDMOS Power Transistor from 1 to 400 MHz

15.8 W GaN Transistor from 3.4 to 3.8 GHz for Open RAN Applications

2 kW Push-Pull LDMOS Transistor from 88 to 108 MHz

10 W, 2-Stage LDMOS Doherty Transistor MMIC from 1805 to 1880 MHz

250 W LDMOS Power Transistor from 1 to 1300 MHz

2.5 kW LDMOS Power Transistor from 1 to 400 MHz

800 W LDMOS Power Transistor from 1 to 650 MHz

520 MHz, 6.5 W Silicon Power MOSFET for VHF/UHF Radio Applications

2500 W Pulsed LDMOS Power Transistor from 1 to 400 MHz

1.5 kW GaN Power Transistor from 2.4 to 2.5 GHz for Medical Applications

150 W GaN HEMT from 1 to 1.4 GHz

4 W GaN on SiC RF Power Transistor from 2 to 12 GHz

50 W LDMOS Dual-Stage Doherty Transistor MMIC from 700 MHz to 1 GHz

28 W GaN Transistor from DC to 6 GHz for Open RAN Applications

150 W GaN-on-SiC Power Transistor from 3.3 to 3.8 GHz

300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz

2 kW CW/Pulsed LDMOS Power Transistor from 1 to 400 MHz

450 W CW/Pulsed LDMOS Power Transistor from 1 to 650 MHz

5 kW GaN-on-SiC Transistor for L-Band Avionics Applications

3-Stage LDMOS Integrated Doherty MMIC from 4.7 to 5 GHz

55 W LDMOS Power Transistor from 5 to 520 MHz for LMR Applications

347 W GaN Power Transistor from 2.3 to 2.5 GHz

1.2 kW LDMOS Power Transistor from 960 to 1215 MHz for Avionics Application

2.5 kW, L-Band GaN Transistor for Directed Energy Applications

70 W GaN HEMT from 12.75 to 13.25 GHz for SATCOM Applications