SweGaN's QuanFINE GaN-on-SiC Epitaxial Materials to Boost Device Efficiency for Ka Band Applications

SweGaN's QuanFINE GaN-on-SiC Epitaxial Materials to Boost Device Efficiency for Ka Band Applications

SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, is partnering with Ferdinand-Braun-Institut (FBH) and the University of Bristol in a European Space Agency project called “Kassiopeia”. The project will use SweGaN’s QuanFINE GaN-on-SiC epitaxial materials to help boost device efficiency for Ka band applications.

The Kassopeia project, led and coordinated by FBH, is developing and demonstrating Ka-band MMICs using novel epitaxy, processing, and circuit concepts towards highly efficient GaN and AlN devices. The goal of the Kassiopeia initiative is harnessing leading technology to create a unique European offering, from the SiC substrates to GaN epi, to power amplifiers. The technology will be highly relevant for the devices used in beam steering antennas for satellite communications, 5G base stations as well as radar applications.

With the ambition of continuously advancing space technology, the cooperation combines key European expertise to enable high-efficiency and high-performance Ka-band GaN MMICs (Monolithic microwave integrated circuits). 

SweGaN is contributing its unique buffer-free solution for GaN-on-SiC epiwafers, QuanFINE, and brings its expertise in epitaxial layer design and optimization for the project. SweGaN will also supply in-house developed semi-insulating SiC substrates for evaluation. The SweGaN activities are financially supported by the Swedish National Space Agency (Rymdstyrelsen).

The epiwafer specialist currently provides epitaxial material to leading manufacturers of components and devices for satellite communication, telecom, and defense applications, plus power electronics for electric vehicles, solar inverters and more. SweGaN will bring its proprietary QuanFINE buffer-free manufacturing process for GaN-on-SiC epiwafers to significantly boost innovation at the material level for Ka-band devices.

Harnessing FBH and University of Bristol’s combined expertise, the strategic development project will further enhance SweGaN’s long-term market strategy and product innovation - and provide significant benefits to their global customer base.

University of Bristol is collaborating with SweGaN and FBH to understand, optimize and exploit the improved thermal management potential of the buffer free GaN-on-SiC for transistor applications, and to apply their unique expertise in assessing thermal transport in semiconductor devices.

Bringing together key European expertise, the selected consortium partners are internationally recognized in their niche fields and provide expert knowledge of their specific technology and characterization techniques.

  • FBH´s unique contribution is its Iridium sputter-gate technology which reduces dynamic losses (gate lagging) up to 2 times less than competing institutional and industrial technologies. The groundbreaking technology provides advantages in device reliability which are particularly important for space borne devices. Additionally, FBH has one of the best equipped labs in Europe.
  • SweGaN is recognized for providing GaN epitaxial wafers for Sub-6 GHz and mm-wave transistors with a significantly low thermal boundary resistance and limited trapping effects – based on SweGaN’ proprietary buffer-free approach.
  • The University of Bristol’s research is specialized in direct thermal measurements on active GaN transistors by using micro-Raman thermography and advanced device characterizations and modeling.  

Kassiopeia” is under the ESA ARTES Advanced Technology Programme: “European Ka-band high power solid-state technology for active antennas”.

Publisher: everything RF
Tags:-   MMICGaNmm-WaveSiCWafers