Industry First 100V RF GaN on SiC Technology for Aerospace & Defense Applications

Industry First 100V RF GaN on SiC Technology for Aerospace & Defense Applications712370

Integra, a leading provider of innovative RF and Microwave Power solutions that help make a safer and more connected world, introduced the industry’s first 100V RF GaN/SiC technology targeting a wide range of applications including radar, avionics, electronic warfare, industrial, scientific and medical systems. Operating at 100V, this technology shatters RF power performance barriers by achieving 3.6 kW of output power with a single GaN transistor.

Integra’s first 100V RF GaN product is the IGN1011S3600, designed specifically for avionics applications. The transistor delivers 3.6 kW of output power with 19 dB of gain and 70% efficiency. The IGN1011S3600, based on Integra’s 100V RF GaN, is a compelling solution for programs that require size, weight, power and cost (SWAP-C) improvements.

Integra’s 100V GaN gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry compared to the more commonplace 50V/65V GaN technology. Customers ultimately benefit with a smaller system footprint and lower system cost.

Suja Ramnath, Integra’s President and CEO, said, “Integra’s 100V RF GaN technology signifies a major milestone in the high-power market. This innovative technology removes the barriers limiting system performance today and allows new architectures previously not possible. We are excited that this disruptive technology will enable our customers to deliver a new generation of high-performance, multi-kiloWatt RF power solutions while reducing their design cycle time and product costs.”

Dr. Mahesh Kumar, an Aerospace and Defense radar systems architect and technology executive, said, “Integra’s first to market 100V RF GaN technology will completely redefine what’s possible for high power RF systems.” By delivering approximately two times the power compared to a 50V GaN transistor in a single package, it will eliminate a significant number of combiners and associated electronic circuitry, resulting in lower system volume, weight and cost, and higher system efficiency.

The IGN1011S3600 100V RF GaN/SiC is now available for sampling to qualified customers.

Publisher: everything RF