II-VI Incorporated, a global supplier of silicon carbide substrates and devices, announced that it received two Excellent Partner Awards, from Sumitomo Electric Industries (SEI), and its subsidiary, Sumitomo Electric Device Innovations (SEDI), for their fiscal year 2020.
SEI and SEDI each announced their award, respectively, on September 8 and 15, 2021, in recognition of II-VI’s responsiveness and scalability, which contributed significantly to the expansion of Sumitomo’s business.
“II-VI is proud to receive these two awards from Sumitomo and would like to thank our teams for their dedication to excellence that made it possible,” said Dr. Chuck Mattera, Chief Executive Officer, II-VI Incorporated. “The awards reflect our strong partnership with Sumitomo and our ability to expand production capacity in response to their needs.”
Osamu Inoue, President and COO of Sumitomo Electric Industries, said that they are pleased to express their gratitude to II-VI for their notable contributions. They will continue to strengthen the partnership between their valued suppliers and the Sumitomo Electric Industries Group and strive to further mutually expand their business.
II-VI and Sumitomo are also collaborating to establish a vertically integrated, 150 mm wafer fabrication platform to manufacture state-of-the-art gallium nitride (GaN) on SiC high-electron-mobility transistor (HEMT) devices that will enable next-generation wireless networks. II-VI’s leadership in 150 mm compound semiconductor manufacturing, combined with SEDI’s leadership in GaN RF device technology, will allow II-VI and SEDI to drive best-in-class performance, greater scale, and competitive costs for 5G RF solutions.