CAES Introduces Wideband GaN-Based RF Power Amplifier for Electronic Warfare Systems

CAES Introduces Wideband GaN-Based RF Power Amplifier for Electronic Warfare Systems

CAES has introduced a Gallium Nitride (GaN) based, high-power wideband RF amplifier that is available frequency configurations from VHF through the S-Band. The Model 8508093-1 is a ruggedized RF amplifier that CAES claims to have the industry’s best RF output power-to-weight ratio and enables long distance stand-off jamming and self-protection applications for a wide range of assets, including airborne platforms with stringent SWaP requirements such as UAVs and EW pods.

“This latest innovation builds upon our decades-long heritage in airborne electronic attack while leveraging the latest GaN technologies,” said Dave Young, Chief Technology Officer, CAES. “Combined with our unique packaging techniques and pioneering cooling approach, the GaN power amplifier is optimized for the next generation of EW systems. Our modular design approach allows customers to scale the amplifier up or down to meet the specific requirements of any application, from EW pods to UAVs and other airborne platforms,” he continued. “The high power amplifier enables longer distance effects and more effective jamming versus legacy systems.”

Offering high levels of capability in the small form factors required for airborne applications, CAES employs novel cooling techniques including custom GaN packaging that enables more efficient heat transfer as well as embedded chill plates that support liquid flow-through cooling for optimized size, weight, power and cost. CAES estimates that an order of magnitude weight savings is possible as compared to legacy EW solutions. The new amplifier is, furthermore, able to operate with high efficiency even when subjected to high reflected-power levels.

Click here to learn more about CAES Model 8508093-1 RF Amplifier.

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Publisher: everything RF


  • Country: United States
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