Integra Technologies, a leading provider of innovative RF and Microwave Power solutions that help make a safer and more connected world, has begun production shipments to US and European customers of its groundbreaking 100 V RF GaN technology. Tom Kole, Integra’s Vice President of Sales and Marketing, said, “In collaboration with our customers, our system engineers have helped design new radar architectures that take full advantage of the benefits of our third generation 100 V RF GaN technology. It’s exciting to see Integra’s 100 V RF GaN products move into production with customers as it signifies another industry first.”
Integra also announced the expansion of its 100 V RF GaN product portfolio with the introduction of 7 new products for avionics, directed energy, electronic warfare, radar, and scientific market segments with power levels up to 5 kW in a single transistor. These products incorporate Integra’s 100 V RF GaN technology optimized to deliver the highest power and efficiency in a single transistor while maintaining reliable operating junction temperatures. Combined with Integra’s thermally enhanced patents and transistor design expertise, these products offer reliable operation with an MTTF of 10 million hours. Suja Ramnath, Integra’s President and CEO, said, “Integra has spent a decade innovating, maturing and commercializing our groundbreaking 100 V RF GaN technology. Building upon our 25-year heritage of semiconductor innovation, this 3rd generation 100 V RF GaN continues to extend our technical and market leadership.”
Additionally, Integra’s partner Teledyne e2v HiRel is offering high-reliability options for all of Integra's 100 V RF GaN power devices and pallets targeted at the defense market. Brad Little, Vice President and General Manager of Teledyne e2v HiRel, said, “Our space customers can benefit from Integra’s 100 V RF GaN products combined with Teledyne’s expertise and long heritage providing space RF components. These innovative products offer space payload engineers state-of-the-art power devices for insertion into their applications.”
New 100V RF GaN parts introduced:
100 V, Ultra-Wideband Multi-Chip Module
100 V, 2.5kW L-Band Transistor
75 V, 3.1 kW L-Band Transistor
100 V, 3.6 kW L-Band Transistor
100 V, 3.6 kW 1.3 GHz Transistor
75 V, 3.2 kW 1.2-1.4 GHz, L-Band Transistor
100 V, 1.5 kW 2.7-2.9 GHz, S-Band Transistor
Click here to see GaN Transistors from Integra on everything RF.
Integra Technologies, was at the IMS 2022 Event in Denver, Colorado last week. Representatives from the company were discussing the company GaN Product portfolio with interested customers.
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