Polyfet RF Devices Showcases Advanced RF Power Transistors and Amplifiers at IMS 2026

Polyfet RF Devices Showcases Advanced RF Power Transistors and Amplifiers at IMS 2026

Polyfet RF Devices is at IMS 2026, showcasing its RF power transistor portfolio along with high-power transistor and amplifier solutions for RF and microwave applications. Visitors can meet the company at booth #14023 to learn more about the company’s latest products, including its VDMOS, LDMOS, and GaN transistor offerings, the LS2641 LDMOS transistor and demonstration amplifier, and the MCCQ04/MSCQ02 amplifier module chain.


Products Featured at IMS 2026

RF Power Transistor Portfolio

Polyfet RF Devices manufactures a broad range of RF power transistors based on VDMOS, LDMOS, and GaN technologies. These devices are available in a variety of industry-standard packages and are designed to support applications operating up to 3 GHz, with power levels reaching 2 kW and supply voltages up to 50 VDC. The company positions its portfolio as a solution for both new RF system developments and replacement of obsolete transistors, supported by short lead times and long product life cycles. Click here to learn more.


LS2641 LDMOS Transistor and Demonstration Amplifier

The company is showcasing the LS2641, an unmatched push-pull LDMOS transistor designed for broadband RF applications from 1 MHz to 1300 MHz. Operating from a 28 V supply, the device delivers up to 200 W saturated output power across the 20 MHz to 520 MHz frequency range and can support even higher power levels when operated at elevated drain voltages. Polyfet is demonstrating the transistor through its TB263 amplifier platform, showcasing its performance for high-power RF applications. Click here to learn more.


MCCQ04 and MSCQ02 Amplifier Module Chain

Another solution featured at the booth is the MCCQ04 and MSCQ02 amplifier module chain. These internally matched RF power amplifier modules are based on Polyfet’s LDMOS transistor technology and are designed for broadband operation from 30 MHz to 512 MHz. When cascaded together, the modules provide up to 175 W saturated output power with 47 dB gain, making them suitable for high-power communication, test, and RF transmission applications. Click to learn more about MCCQ04 and MSCQ02.


Stop by the booth #14023 to discuss these solutions with Polyfet RF Devices’ team and learn more about the company’s advanced RF power semiconductor and amplifier technologies.

Click here to learn more about Polyfet RF Devices' RF solutions.

Publisher: everything RF
Tags:-   Power AmplifierTransistorGaNLDMOS