ARF1306C5

RF Amplifier by Altum RF (27 more products)

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ARF1306C5 Image

The ARF1306C5 from Altum RF is a Distributed Amplifier that operates from 2 to 18 GHz. It delivers a saturated output power of 34 dBm with a small-signal gain of 15 dB. This GaN amplifier requires a bias voltage of 20 V and draws 450 mA of current. It is pre-matched to 50 ohms and the RF ports are AC coupled. The ARF1306C5 is housed in an air-cavity ceramic QFN package that measures 5 x 5 mm and is designed for high bandwidth test & measurement, aerospace and defence, and ISM applications.

Product Specifications

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Product Details

  • Part Number
    ARF1306C5
  • Manufacturer
    Altum RF
  • Description
    2 W Distributed GaN Amplifier from 2 to 18 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Aerospace & Defense, Test & Measurement
  • Frequency
    2 to 18 GHz
  • Gain
    15 dB
  • Power Gain
    10 dB
  • Output Power
    34 dBm
  • Output Power
    2.51 W
  • Grade
    Commercial, Military, Space
  • Saturated Power
    34 dBm
  • Saturated Power
    2.51 W
  • Impedance
    50 Ohms
  • Sub-Category
    Distributed Amplifier, GaN Amplifier
  • Return Loss
    15 dB
  • Supply Voltage
    20 V
  • Current Consumption
    450 mA
  • Transistor Technology
    GaN
  • Package Type
    Ceramic, Surface Mount
  • Package
    QFN
  • Dimensions
    5 x 5 mm
  • RoHS
    Yes