CGHV38375F

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CGHV38375F Image

The CGHV38375F from Wolfspeed is a GaN on SiC Amplifier (IM-FET) that operates from 2.75 to 3.75 GHz. It delivers a saturated output power of 400 W with a small signal gain of more than 10 dB and has an efficiency of 55%. This amplifier is based on GaN on SiC FET technology and is suitable as a high-power building block supporting both pulsed and CW radar applications. It requires a supply voltage of 50 V and draws 500 mA of current. The amplifier is matched to 50 ohms at both input and output ports and provides coverage over the entire S-Band radar band. It is available in a flanged package.

Product Specifications

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Product Details

  • Part Number
    CGHV38375F
  • Manufacturer
    Wolfspeed
  • Description
    400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz

General Parameters

  • Configuration
    IC/MMIC/SMT
  • Display Application
    Pulsed and CW S-Band Radar
  • Industry Application
    Radar
  • Frequency
    2.75 to 3.75 GHz
  • Gain
    10 to 13.5 dB
  • Power Gain
    9.9 to 11.7 dB
  • Small Signal Gain
    10 to 13.5 dB
  • Output Power
    57.7 dBm
  • Output Power
    588.8 W
  • Grade
    Commercial, Military, Space Qualified
  • Saturated Power
    400 W
  • Class
    Class 1B
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 us
  • Duty Cycle
    10 %
  • VSWR
    5:1
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    -6 dB
  • Supply Voltage
    50 V
  • Current Consumption
    500 mA
  • Technology
    GaN on SiC
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Drain Efficiency :- 50 to 67 %

Technical Documents