Crees CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based power amplifier that operates from 2.7 to 3.5 GHz. The amplifer can provide up to 80 W of saturated power, has a gain of 27 dB and requires a 28 V supply voltage. The amplifier has a high effeciency of 56% and is ideal for military applications. It contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package of 0.5 x 0.5 in.