The CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This power amplifier operates from 5.5 GHz to 8.5 GHz and can provide up to 35 W of saturated power, 25 W of p1dB and a gain of 25 dBm. It requires a supply voltage of 25V and has a high break down voltage. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance. It is ideal for point to point radios, communications and satellite communication uplinks.