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RF Amplifier by Empower RF (213 more products)

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The 2239 from Empower RF Systems is a Solid-State Class AB Pulsed Power Amplifier System that operates from 2900 to 3500 MHz. This amplifier is available in a compact 3U rack compatible footprint with features ideal for integrating into Magnetron, IoT, Klystron, and TWT systems. It delivers 1000 W of peak pulsed output power and has a gain of more than 65 dB. The amplifier has a duty cycle from 0.5 to 20 %, a pulse width from 1 to 500 μs, and a pulse rise/fall time of 70 ns.

The amplifier is designed for 0 dBm input that is pulse-modulated. A fast TTL gate input is standard, and it’s use optional when complete shutoff of the output stage is desired between pulses. It utilizes high power GaN on SiC devices that provide wide frequency response, high gain, high peak power capability, and low distortions. It has an embedded directional coupler that eliminates the need for external components.

The amplifier system includes a built-in control and monitoring system, with protection functions that preserve maximum output availability and reliability. Remote management and diagnostics can be done via an Ethernet port to LAN. The system can be controlled remotely by a web browser or M2M (machine to machine interface) or locally by a panel computer. The control system runs an embedded OS (Linux), has a built-in non-volatile memory for factory setup. It is available in a rack-mount enclosure that measures 17 x 5.25 x 22 inches with N-Type, SMA and BNC female connectors and is suitable for pulse and CW applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Empower RF
  • Description
    1000 W Magnetron Driver Amplifier from 2900 to 3500 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Frequency
    2.9 to 3.5 GHz
  • Power Gain
    65 dB
  • Grade
    Commercial, Military, Space
  • Saturated Power
    53.98 dBm
  • Saturated Power
    250 W
  • Peak Power
    1000 W
  • Input Power
    -5 to 0 dBm
  • Input Power
    1 mW
  • Power Consumption
    1300 VA
  • Class
    Class AB
  • Impedance
    50 Ohms
  • Pulsed/CW
  • Pulse Width
    1 to 500 usec
  • Duty Cycle
    0.5 to 20 %
  • Rise Time
    70 to 150 nsec
  • Fall Time
    70 to 150 nsec
  • VSWR
  • Input Return Loss
    -10 dB
  • Harmonics
    -30 to -25 dBc
  • Spurious
    -60 dBc
  • Pulse Droop
    1.2 to 1.5 dB
  • Supply Voltage
    100 to 240 V
  • Transistor Technology
    GaN on SiC
  • Package Type
    Benchtop / Rackmount
  • Dimensions
    17 x 5.25 x 22 Inch (W x H x D)
  • Connectors
    N-Type, N-Type - Female
  • Interface
    Ethernet, USB, RS-232 /RS - 422
  • Weight
    65 Pound
  • Cooling Options
    Built-in forced air cooling system
  • Operating Temperature
    -10 to 50 Degree C
  • Storage Temperature
    -40 to 85 Degree C
  • Tags
    High Power Amplifier
  • Note
    Noise Power Output :- -10 to -6 dBm/MHz,

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