The BGA9V1MN9 from Infineon Technologies is a Low Noise Amplifier designed for LTE and 5G applications from 3.3 to 4.2 GHz. It provides a gain of 21 dB with a noise figure of 0.75 dB and has high EMI robustness. The LNA features gain steps that allow the gain and linearity to be adjusted to enhance the system dynamic range and accommodate varying interference scenarios. The amplifier has an MIPI RFFE interface that provides comprehensive control over multiple gain steps and bias modes.
The BGA9V1MN9 requires a DC supply from 1.1 to 2 V, consuming 5.8 mA of current, and also supports ultra-low bypass current of 2 µA to reduce power consumption. It is available in a surface-mount package that measures 1.1 x 1.1 mm and conforms to the JEDEC47/20/22 standard for industrial applications and is ideal for use in LTE devices or 5G smartphones.