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BGA9V1MN9

RF Amplifier by Infineon Technologies

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The BGA9V1MN9 from Infineon Technologies is a Low Noise Amplifier designed for LTE and 5G applications from 3.3 to 4.2 GHz. It provides a gain of 21 dB with a noise figure of 0.75 dB and has high EMI robustness. The LNA features gain steps that allow the gain and linearity to be adjusted to enhance the system dynamic range and accommodate varying interference scenarios. The amplifier has an MIPI RFFE interface that provides comprehensive control over multiple gain steps and bias modes.

The BGA9V1MN9 requires a DC supply from 1.1 to 2 V, consuming 5.8 mA of current, and also supports ultra-low bypass current of 2 µA to reduce power consumption. It is available in a surface-mount package that measures 1.1 x 1.1 mm and conforms to the JEDEC47/20/22 standard for industrial applications and is ideal for use in LTE devices or 5G smartphones.

Product Specifications

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Product Details

  • Part Number
    BGA9V1MN9
  • Manufacturer
    Infineon Technologies
  • Description
    Low Noise Amplifier from 3.3 to 4.2 GHz for LTE and 5G Applications

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    LTE, 5G
  • Industry Application
    Cellular
  • Frequency
    3.3 to 4.2 GHz
  • Power Gain
    -4.2 to 22.5 dB
  • Noise Figure
    0.75 to 12 dB
  • P1dB
    7 dBm
  • P1dB
    5 mW
  • Grade
    Commercial
  • IP3
    23 dBm
  • Input Power
    25 dBm
  • Input Power
    316.2 mW
  • Power Dissipation
    50 mW
  • Reverse Isolation
    2 to 36 dB
  • Input Return Loss
    4 to 13 dB
  • Output Return Loss
    7 to 33 dB
  • Supply Voltage
    1.1 to 2 V
  • Current Consumption
    5.8 mA
  • Package
    TSNP leadless
  • Dimensions
    1.1 x 1.1 mm
  • Operating Temperature
    -30 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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