MAGX-100027-300C0P Image


RF Amplifier by MACOM

Note : Your request will be directed to MACOM.

The MAGX-100027-300C0P from MACOM is a GaN on Si HEMT Amplifier that operates from DC to 2.7 GHz. It provides an output power of 300 W (54.8 dBm) with a gain of 13.5 dB and has a PAE of 65.3%. This device supports both CW and pulsed operations. It consists of a pair of isolated symmetric amplifiers that are suitable for linear and saturated applications. This device requires a DC supply of 50 V and consumes 100 mA of current.

The MAGX-100027-300C0P is available in a plastic package and is ideally suited for military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation, and radar applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    300 W GaN on Si HEMT Amplifier from DC to 2.7 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Application
    Avionics, RF Energy, Test Instrumentation
  • Industry Application
    Military, Radar, Test & Measurement, Cellular
  • Frequency
    DC to 2.7 GHz
  • Power Gain
    13 to 14.2 dB
  • Small Signal Gain
    16.3 dB
  • Saturated Power
    54 to 55.5 dBm
  • Saturated Power
    251.18 to 354.81 W
  • Impedance
    50 Ohms
  • Pulsed/CW
  • Pulse Width
    100 us
  • Duty Cycle
    10 %
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    50 V
  • Current Consumption
    100 to 200 mA
  • Transistor Technology
    GaN on SiC HEMT
  • Package Type
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS

Technical Documents

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