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MMA053PP5

RF Amplifier by Microsemi (35 more products)

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The MMA053PP5 from Microsemi is a GaAs pHEMT Distributed Power Amplifier MMIC that operates from DC to 10 GHz. It provides a P1dB of 30 dBm with a gain of 17 dB and has a noise figure of 3.5 dB. The amplifier requires a bias voltage of 10 V and consumes up to 420 mA of current. This RoHS-compliant PA is available in a 32 lead plastic QFN package that measures 5 x 5 mm and is ideal for microwave communications, microwave radios and VSAT, telecom infrastructure, test instrumentation, military, and space applications. The MMA053PP5 from Microsemi is a GaAs pHEMT Distributed Power Amplifier MMIC that operates from DC to 10 GHz. It provides a P1dB of 30 dBm with a gain of 17 dB and has a noise figure of 3.5 dB. The amplifier requires a bias voltage of 10 V and consumes up to 420 mA of current. This RoHS-compliant PA is available in a 32 lead plastic QFN package that measures 5 x 5 mm and is ideal for microwave communications, microwave radios and VSAT, telecom infrastructure, test instrumentation, military, and space applications.

Product Specifications

    Product Details

    • Part Number :
      MMA053PP5
    • Manufacturer :
      Microsemi
    • Description :
      1 W Distributed Power Amplifier GaAs MMIC from DC to 10 GHz

    General Parameters

    • Type :
      Power Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Application :
      Telecom Infrastructure, Microwave Radio, VSAT, Microwave Communications
    • Industry Application :
      Aerospace & Defense, Test & Measurement
    • Frequency :
      DC to 10 GHz
    • Gain :
      15 to 17 dB
    • Noise Figure :
      2.8 to 4 dB
    • P1dB :
      26.5 to 29 dBm
    • P1dB :
      0.44 to 0.80 W
    • IP3 :
      41 to 44 dBm
    • Impedance :
      50 Ohms
    • Sub-Category :
      Distributed Amplifier
    • Input Return Loss :
      12 to 23 dB
    • Output Return Loss :
      12 to 16 dB
    • Supply Voltage :
      10 V
    • Current Consumption :
      420 mA
    • Transistor Technology :
      GaAs pHEMT
    • Package Type :
      Surface Mount
    • Package :
      32 L Plastic QFN
    • Dimensions :
      5 x 5 mm
    • Operating Temperature :
      -55 to 85 Degree C
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      P3dB : 30.5 to 33 dBm

    Technical Documents

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