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The APH668 from Northrop Grumman is a Three-Stage Power Amplifier that operates from 71 to 76 GHz. It delivers a saturated output power of 28 dBm with a linear gain of more than 16.5 dB and has a power-added efficiency (PAE) of 22%. This amplifier is manufactured using GaAs pHEMT technology and is fully passivated to ensure rugged and reliable operation. It requires a DC supply voltage of 4 V and consumes less than 630 mA of current. The amplifier is available as a die that measures 3.79 x 2.92 mm with the amplifier’s bond pad and backside metallization made from Ti/Au to provide compatibility with conventional die attach thermo-compression, and thermo-sonic wire bonding assembly techniques. It is ideal for use in FCC E-band communication systems, enterprise Wireless LAN, high-capacity links, wireless fiber replacement, and short-haul applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Northrop Grumman
  • Description
    Three-Stage Power Amplifier Die from 71 to 76 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Application
  • Standards Supported
    E Band, WLAN
  • Frequency
    71 to 76 GHz
  • Gain
    16.5 to 19 dB
  • Output Power
    26 to 28 dBm
  • Output Power
    0.4 to 0.63 W
  • Grade
  • Saturated Power
    26 to 28 dBm
  • Saturated Power
    0.39 to 0.63 W
  • Pulsed/CW
  • Input Return Loss
    15 to 20 dB
  • Output Return Loss
    16 to 20 dB
  • Supply Voltage
    4 V
  • Current Consumption
    270 to 360 mA
  • Transistor Technology
    GaAs HEMT
  • Technology
  • Dimensions
    3.79 x 2.92 x 0.05 mm

Technical Documents