The APH668 from Northrop Grumman is a Three-Stage Power Amplifier that operates from 71 to 76 GHz. It delivers a saturated output power of 28 dBm with a linear gain of more than 16.5 dB and has a power-added efficiency (PAE) of 22%. This amplifier is manufactured using GaAs pHEMT technology and is fully passivated to ensure rugged and reliable operation. It requires a DC supply voltage of 4 V and consumes less than 630 mA of current. The amplifier is available as a die that measures 3.79 x 2.92 mm with the amplifier’s bond pad and backside metallization made from Ti/Au to provide compatibility with conventional die attach thermo-compression, and thermo-sonic wire bonding assembly techniques. It is ideal for use in FCC E-band communication systems, enterprise Wireless LAN, high-capacity links, wireless fiber replacement, and short-haul applications.