APN173

Note : Your request will be directed to Northrop Grumman.

The APN173 from Northrop Grumman is a RF Amplifier with Frequency 34 to 36 GHz, Gain 18 to 19.5 dB, Saturated Power 37 to 37.5 dBm, Saturated Power 5.01 to 5.6 W, PAE 24 to 25%. Tags: Power Amplifier. More details for APN173 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APN173
  • Manufacturer
    Northrop Grumman
  • Description
    GaN HEMT Power Amplifier

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Industry Application
    Radar, Aerospace & Defense, Wireless Infrastructure
  • Frequency
    34 to 36 GHz
  • Gain
    18 to 19.5 dB
  • Saturated Power
    37 to 37.5 dBm
  • Saturated Power
    5.01 to 5.6 W
  • PAE
    24 to 25%
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    4.5 to 6 dB
  • Output Return Loss
    10 to 13 dB
  • Supply Voltage
    28 V
  • Current Consumption
    144 to 288 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN

Technical Documents

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