APN252

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The APN252 from Northrop Grumman is a RF Amplifier with Frequency 10 to 14 GHz, Gain 23 to 25.5 dB, P1dB 34 dBm, P1dB 2.512 W, Saturated Power 37 to 38 dBm. Tags: Power Amplifier. More details for APN252 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APN252
  • Manufacturer
    Northrop Grumman
  • Description
    GaN HEMT Driver Amplifier

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Radio, Point-to-point, VSAT, Point-to-Multipoint
  • Industry Application
    Broadcast, Wireless Infrastructure
  • Frequency
    10 to 14 GHz
  • Gain
    23 to 25.5 dB
  • P1dB
    34 dBm
  • P1dB
    2.512 W
  • Saturated Power
    37 to 38 dBm
  • Saturated Power
    5.01 to 6.3 W
  • Output Power CW
    34 dBm
  • Pulse Power
    34 dBm
  • Pulse Power
    2.511 W
  • PAE
    32 to 40%
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    10 to 18 dB
  • Output Return Loss
    2 to 3 dB
  • Supply Voltage
    22 V
  • Current Consumption
    80 to 400 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN

Technical Documents

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