APN319 Image

APN319

RF Amplifier by Northrop Grumman (38 more products)

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The APN319 from Northrop Grumman is a GaN power amplifier that operates from 47.2 to 51.4 GHz. It provides an output power of 7 W with a gain of 20 dB and Power Added Efficiency of 19%. This amplifier requires 24 V DC supply and consumes 200mA of current. It is fabricated using a GaN on SiC process and measures 2.8 x 1.4 mm (3.92 mm2). The amplifier can be used in 5G and SATCOM systems.

Product Specifications

    Product Details

    • Part Number :
      APN319
    • Manufacturer :
      Northrop Grumman
    • Description :
      7 W GaN Power Amplifier from 47.2 to 51.4 GHz

    General Parameters

    • Type :
      Power Amplifier
    • Configuration :
      Die
    • Application :
      Telecommunications
    • Industry Application :
      IoT, SATCOM
    • Frequency :
      47.2 to 51.4 GHz
    • Gain :
      16 to 20 dB
    • Grade :
      Commercial, Military, Space
    • Saturated Power :
      41.14 dBm
    • Saturated Power :
      13 W
    • PAE :
      19 %
    • Sub-Category :
      GaN Amplifier
    • Input Return Loss :
      12 dB
    • Output Return Loss :
      8 to 10 dB
    • Supply Voltage :
      20 to 28 V
    • Current Consumption :
      100 to 480 mA
    • Technology :
      GaN HEMT
    • Package Type :
      Chip
    • Dimensions :
      2.8 x 1.4 mm
    • Operating Temperature :
      -65 to 125 Degree C
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Die Size - 3.92 mm^2 , 0.15 um GaN HEMT Process, 4 mil SiC substrate

    Technical Documents

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