The A2I08H040N from NXP Semiconductors is a RF Amplifier with Frequency 728 to 960 MHz, Gain 30.7 dB @ 920 MHz, Output Power 39 dBm, Output Power 9 W, P1dB 46.7 dBm. Tags: Power Amplifier, LDMOS Amplifier. More details for A2I08H040N can be seen below.

Product Specifications

  • Part Number
    A2I08H040N
  • Manufacturer
    NXP Semiconductors
  • Description
    728 to 960 MHz, 39 dBm Power Amplifier, LDMOS Amplifier
  • Type
  • Configuration
    IC / MMIC
  • Application
    Cellular, Base stations
  • Standards Supported
    WCDMA
  • Frequency
    728 to 960 MHz
  • Gain
    30.7 dB @ 920 MHz
  • Output Power
    39 dBm
  • Output Power
    9 W
  • P1dB
    46.7 dBm
  • P1dB
    46.8 W
  • PAE
    0.459
  • Class
    AB, C
  • Impedance
    50 Ohms
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Package Type
    Chip
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Thermal Resistance:- 3.4 Degree C/W, Test Signal:- W-CDMA
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