The A2I09VD030N from NXP Semiconductors is a RF Amplifier with Frequency 920 to 960 MHz, Gain 34.4 to 34.5 dB, Power Gain 32 to 35 dB, Gain Flatness 0.2 dB, P1dB 45.19 dBm. Tags: Chip, Power Amplifier. More details for A2I09VD030N can be seen below.

Product Specifications

    Product Details

    • Part Number :
      A2I09VD030N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      RF LDMOS Wideband Integrated Power Amplifier, 920 to 960 GHz

    General Parameters

    • Type :
      Power Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Application :
      Base Station, Cellular
    • Standards Supported :
      WCDMA
    • Industry Application :
      Wireless Infrastructure
    • Frequency :
      920 to 960 MHz
    • Gain :
      34.4 to 34.5 dB
    • Power Gain :
      32 to 35 dB
    • Gain Flatness :
      0.2 dB
    • P1dB :
      45.19 dBm
    • P1dB :
      33.3 W
    • IM3 :
      130 MHz
    • Output Power CW :
      33 to 44.5 W
    • PAE :
      18.5 to 19.8 %
    • Impedance :
      50 Ohms
    • Pulsed/CW :
      CW/Pulsed
    • Duty Cycle :
      0.1
    • VSWR :
      10.00:1
    • Supply Voltage :
      48 V
    • Quiscent Current :
      46 to 154 mA
    • Transistor Technology :
      LDMOS
    • Package Type :
      Chip
    • Operating Temperature :
      -40 to 125 Degree C
    • Storage Temperature :
      -65 to 150 Degree C
    • RoHS :
      Yes
    • Note :
      P3dB : 40.5 W

    Technical Documents

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