The A2I20D020N from NXP Semiconductors is a RF LDMOS Amplifier that operates from 1.4 to 2.2 GHz. It delivers 2.5 Watts of output power with a gain of 31 dB and an efficiency of 19.7%. This wideband integrated circuit is designed with on-chip matching and its multi-stage structure is rated for 20 to 32 V operation. It covers all typical cellular base station modulation formats. The amplifier has Integrated Quiescent Current Temperature Compensation with Enable/Disable Functionality. The RF Decoupled Drain Pins Reduce Overall Board Space.

Product Specifications

  • Part Number
    A2I20D020N
  • Manufacturer
    NXP Semiconductors
  • Description
    2.5 W RF LDMOS Amplifier from 1.4 to 2.2 GHz
  • Type
  • Configuration
    IC / MMIC
  • Application
    Cellular, Base stations
  • Standards Supported
    WCDMA
  • Frequency
    1.4 to 2.2 GHz
  • Gain
    31 dB @ 1800 MHz
  • Output Power
    33 dBm
  • Output Power
    2.5 W
  • P1dB
    42 dBm
  • P1dB
    16 W
  • PAE
    0.197
  • Class
    AB
  • Impedance
    50 Ohms
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Package Type
    Chip
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Thermal Resistance:- 2.9 Degree C/W, Test Signal:- W-CDMA
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