The A2I20H060N from NXP Semiconductors is a RF Amplifier with Frequency 1.8 to 2.2 GHz, Gain 28.4 dB @ 1840 MHz, Output Power 40 dBm, Output Power 12 W, P1dB 48 dBm. Tags: Power Amplifier, LDMOS Amplifier. More details for A2I20H060N can be seen below.

Product Specifications

  • Part Number
    A2I20H060N
  • Manufacturer
    NXP Semiconductors
  • Description
    1.8 to 2.2 GHz, 40 dBm Power Amplifier, LDMOS Amplifier
  • Type
  • Configuration
    IC / MMIC
  • Application
    Cellular, Base stations
  • Standards Supported
    WCDMA
  • Frequency
    1.8 to 2.2 GHz
  • Gain
    28.4 dB @ 1840 MHz
  • Output Power
    40 dBm
  • Output Power
    12 W
  • P1dB
    48 dBm
  • P1dB
    63 W
  • PAE
    0.438
  • Class
    AB
  • Impedance
    50 Ohms
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Package Type
    Chip
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Thermal Resistance:- 1.6 Degree C/W, Test Signal:- W-CDMA
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