The A2I25D012N from NXP Semiconductors is a RF Amplifier with Frequency 2.1 to 2.9 GHz, Gain 33.2 dB @ 2690 MHz, Output Power 33 dBm, Output Power 2.2 W, P1dB 41.9 dBm. Tags: Power Amplifier, LDMOS Amplifier. More details for A2I25D012N can be seen below.

Product Specifications

  • Part Number
    A2I25D012N
  • Manufacturer
    NXP Semiconductors
  • Description
    2.1 to 2.9 GHz, 33 dBm Power Amplifier, LDMOS Amplifier
  • Type
  • Configuration
    IC / MMIC
  • Application
    Cellular, Base stations
  • Standards Supported
    WCDMA
  • Frequency
    2.1 to 2.9 GHz
  • Gain
    33.2 dB @ 2690 MHz
  • Output Power
    33 dBm
  • Output Power
    2.2 W
  • P1dB
    41.9 dBm
  • P1dB
    15.5 W
  • PAE
    0.198
  • Class
    AB
  • Impedance
    50 Ohms
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Package Type
    Chip
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Thermal Resistance:- 3.3 Degree C/W, Test Signal:- W-CDMA
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