The A2I35H060N from NXP Semiconductors is a RF Amplifier with Frequency 3.4 to 3.8 GHz, Gain 24 dB @ 3500 MHz, P1dB 46.8 dBm, P1dB 48 W, Output Power 40 dBm. Tags: Power Amplifier, LDMOS Amplifier. More details for A2I35H060N can be seen below.

Product Specifications

  • Part Number
    A2I35H060N
  • Manufacturer
    NXP Semiconductors
  • Description
    3.4 to 3.8 GHz, 40 dBm Power Amplifier, LDMOS Amplifier
  • Type
  • Configuration
    IC / MMIC
  • Application
    Cellular, Base stations
  • Standards Supported
    WCDMA
  • Frequency
    3.4 to 3.8 GHz
  • Gain
    24 dB @ 3500 MHz
  • P1dB
    46.8 dBm
  • P1dB
    48 W
  • Output Power
    40 dBm
  • Output Power
    10 W
  • PAE
    0.324
  • Supply Voltage
    28 V
  • Class
    AB, C
  • Impedance
    50 Ohms
  • Technology
    LDMOS
  • Package Type
    Chip
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Thermal Resistance:- 1.7 Degree C/W, Test Signal:- W-CDMA
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.