A3I20D040WN Image


RF Amplifier by NXP Semiconductors

The A3I20D040WN from NXP is an RF LDMOS amplifier that operates from from 1400 to 2200 MHz. This multi-stage structure provides 5 watts of power with an efficiency of 18.8% and a gain of over 30 dB. It requires a 28 V supply and covers all typical cellular base station modulation formats. The amplifier is matched to 50 ohms with DC blocking at the input and output ports. It is available in a surface mount plastic package. This amplifier is part of the 3rd Generation Airfast wideband RF LDMOS amplifier family.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    5 Watt, RF LDMOS Amplifier from 1400 to 2200 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Industry Application
    Wireless Infrastructure
  • Frequency
    1400 to 2200 MHz
  • Gain
    31.8 to 32.9 dB
  • Output Power
    5 Watts
  • PAE
  • Impedance
    50 Ohms
  • Supply Voltage
    28 V
  • Package Type
    Surface Mount
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