The A3I35D025WN from NXP is an RF LDMOS amplifier that operates from 3200 to 4000 MHz. This multi-stage structure provides 3.4 watts of power with an efficiency of 17.3% and a gain of 28.9 dB. It requires a 28 V supply and covers all typical cellular base station modulation formats. The amplifier is matched to 50 ohms with DC blocking at the input and output ports. It is available in a surface mount plastic package and is ideal for digital predistortion error correction systems and Doherty applications.

Product Specifications

    Product Details

    • Part Number :
      A3I35D025WN
    • Manufacturer :
      NXP Semiconductors
    • Description :
      3.4 W RF LDMOS Amplifier from 3.2 to 4 GHz

    General Parameters

    • Type :
      Power Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Industry Application :
      Cellular
    • Frequency :
      3200 to 4000 MHz
    • Power Gain :
      26.5 to 30.5 dB
    • Output Power :
      35 dBm
    • Output Power :
      3.4 W
    • PAE :
      15.5 to 17.3 %
    • Class :
      AB
    • Impedance :
      50 Ohms
    • Supply Voltage :
      32 V
    • Technology :
      LDMOS
    • Package Type :
      Surface Mount
    • Operating Temperature :
      -40 to 150 Degrees C
    • Storage Temperature :
      -65 to 150 Degrees C

    Technical Documents

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