A3I35D025WN Image


RF Amplifier by NXP Semiconductors

The A3I35D025WN from NXP is an RF LDMOS amplifier that operates from 3200 to 4000 MHz. This multi-stage structure provides 3.4 watts of power with an efficiency of 17.3% and a gain of 28.9 dB. It requires a 28 V supply and covers all typical cellular base station modulation formats. The amplifier is matched to 50 ohms with DC blocking at the input and output ports. It is available in a surface mount plastic package and is ideal for digital predistortion error correction systems and Doherty applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    3.4 W RF LDMOS Amplifier from 3.2 to 4 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Industry Application
  • Frequency
    3200 to 4000 MHz
  • Power Gain
    26.5 to 30.5 dB
  • Output Power
    35 dBm
  • Output Power
    3.4 W
  • PAE
    15.5 to 17.3 %
  • Class
  • Impedance
    50 Ohms
  • Supply Voltage
    32 V
  • Technology
  • Package Type
    Surface Mount
  • Operating Temperature
    -40 to 150 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents

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