The A3M35TL039 from NXP Semiconductors is a Doherty Power Amplifier that operates from 3400 to 3650 MHz. It has been designed for wireless infrastructure applications that demand high performance in a small footprint. The amplifier delivers an average output power of 7 W with a gain of 28.8 dB and has a PAE of up to 40.8%. It has DC-blocking and is impedance matched to 50 ohms. The amplifier requires a DC supply of 26 V and has a quiescent state drain current of 72 mA.

This LDMOS-based amplifier is ideal for use in massive MIMO systems, outdoor small cells and low-power remote radio heads. This field-proven LDMOS power amplifier is designed for TDD and FDD LTE systems. It is available in a LGA package that measures 10.00 x 6.00 x 1.37 mm with metal bond pads.

Product Specifications

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Product Details

  • Part Number
    A3M35TL039
  • Manufacturer
    NXP Semiconductors
  • Description
    7 W LDMOS Doherty Power Amplifier from 3.4 to 3.65 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell, LTE, Radio, TDD, FDD
  • Standards Supported
    5G
  • Industry Application
    Wireless Infrastructure, Cellular, Broadcast
  • Frequency
    3400 to 3650 MHz
  • Gain
    26.5 to 28.8 dB
  • Gain Flatness
    0.5 dB
  • Output Power
    38.4 dBm
  • Output Power
    7 W
  • Grade
    Commercial
  • PAE
    40.50%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    10 us
  • Duty Cycle
    10%
  • Sub-Category
    Doherty Amplifier
  • Supply Voltage
    24 to 30 V
  • Transistor Technology
    LDMOS
  • Package Type
    Surface Mount
  • Dimensions
    10 mm x 6 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    P3 dB : 46 to 47 dBm

Technical Documents

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