The A3M35TL039 from NXP Semiconductors is a Doherty Power Amplifier that operates from 3400 to 3650 MHz. It has been designed for wireless infrastructure applications that demand high performance in a small footprint. The amplifier delivers an average output power of 7 W with a gain of 28.8 dB and has a PAE of up to 40.8%. It has DC-blocking and is impedance matched to 50 ohms. The amplifier requires a DC supply of 26 V and has a quiescent state drain current of 72 mA.
This LDMOS-based amplifier is ideal for use in massive MIMO systems, outdoor small cells and low-power remote radio heads. This field-proven LDMOS power amplifier is designed for TDD and FDD LTE systems. It is available in a LGA package that measures 10.00 x 6.00 x 1.37 mm with metal bond pads.