AFSC5G26E38 Image


RF Amplifier by NXP Semiconductors

The AFSC5G26E38 from NXP Semiconductors is a fully integrated Doherty LDMOS Power Amplifier module designed for wireless infrastructure applications from 2496 to 2690 MHz. This amplifier provides 6 W of average output power with a gain of more than 35.4 dB and a typical efficiency of 44.9%. It requires a 28 VDC supply and is internally matched to 50 ohms.

This Airfast power amplifier has been developed for TDD and FDD LTE systems. It is RoHS compliant and available in a surface-mount package that measures 10 x 6 mm. This class AB, C amplifier is ideal for massive MIMO systems, outdoor small cells, low power remote radio heads, and low complexity analog or digital linearization systems.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    6 W LDMOS Power Amplifier from 2496 to 2690 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
  • Application
    Small Cell, LTE, Radio, TDD, FDD
  • Standards Supported
  • Industry Application
    Wireless Infrastructure, Cellular, Broadcast
  • Frequency
    2496 to 2690 MHz
  • Gain
    30 to 36.1 dB
  • Gain Flatness
    1.2 dB
  • Output Power
    37.78 dBm
  • Output Power
    6 W
  • Grade
    Commercial, Military
  • PAE
  • Impedance
    50 Ohms
  • Pulsed/CW
  • Pulse Width
    10 us
  • Duty Cycle
  • Sub-Category
    Doherty Amplifier
  • Supply Voltage
    24 to 31 V
  • Transistor Technology
  • Package Type
    Surface Mount
  • Dimensions
    10 mm x 6 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
  • Note
    P3 dB : 46 to 46.5 dBm

Technical Documents

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