The AFSC5G26E39 from NXP Semiconductors is a RF Amplifier with Frequency 2496 to 2690 MHz, Gain 26.5 to 30.2 dB, Gain Flatness 0.5 dB, Output Power 39.03 dBm, Output Power 8 W. Tags: Surface Mount, Power Amplifier. More details for AFSC5G26E39 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFSC5G26E39
  • Manufacturer
    NXP Semiconductors
  • Description
    8 W Doherty Amplifier from 2496 to 2690 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell, LTE, Radio, TDD, FDD
  • Standards Supported
    5G
  • Industry Application
    Wireless Infrastructure, Cellular, Broadcast
  • Frequency
    2496 to 2690 MHz
  • Gain
    26.5 to 30.2 dB
  • Gain Flatness
    0.5 dB
  • Output Power
    39.03 dBm
  • Output Power
    8 W
  • Grade
    Commercial, Military
  • PAE
    41.80%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    10 us
  • Duty Cycle
    10%
  • Sub-Category
    Doherty Amplifier
  • Supply Voltage
    24 to 30 V
  • Transistor Technology
    LDMOS
  • Package Type
    Surface Mount
  • Dimensions
    10 mm x 6 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    P3 dB : 47.2 to 48 dBm

Technical Documents

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