BGM1013

RF Amplifier by NXP Semiconductors

The BGM1013 from NXP Semiconductors is a RF Amplifier with Frequency 1 to 2.2 GHz, Gain 24 to 36.2 dB, Noise Figure 4.6 to 5.1 dB, P1dB 7 to 13 dBm, P1dB 0.005 to 0.02 W. Tags: Surface Mount, Power Amplifier. More details for BGM1013 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BGM1013
  • Manufacturer
    NXP Semiconductors
  • Description
    MMIC wideband amplifier

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Frequency
    1 to 2.2 GHz
  • Gain
    24 to 36.2 dB
  • Noise Figure
    4.6 to 5.1 dB
  • P1dB
    7 to 13 dBm
  • P1dB
    0.005 to 0.02 W
  • IP3
    17 to 22.7 dBm
  • IP3
    0.05 to 0.18 W
  • Saturated Power
    9 to 14 dBm
  • Saturated Power
    0.008 to 0.03 W
  • Power Dissipation
    200 mW
  • Pulsed/CW
    CW
  • Reverse Isolation
    34 to 42 dB
  • Return Loss
    9.3 to 10.6 dB
  • Output Return Loss
    13 to 20 dB
  • Supply Voltage
    5 to 6 V
  • Current Consumption
    34.5 to 36.2 dB
  • Technology
    MMIC
  • Package Type
    Surface Mount
  • Package
    6-pin SOT363
  • Storage Temperature
    -65 to 150 Degree C

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