BGU7062N2

RF Amplifier by NXP Semiconductors

The BGU7062N2 from NXP Semiconductors is a RF Amplifier with Frequency 1.71 to 1.785 GHz, Power Gain 13.3 to 37.2 dB, Gain Flatness ± 0.3 dB, Noise Figure 0.77 dB, P1dB -14 to -6.1 dBm. Tags: Surface Mount, Low Noise Amplifier, Variable Gain Amplifier. More details for BGU7062N2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BGU7062N2
  • Manufacturer
    NXP Semiconductors
  • Description
    Analog high linearity low noise variable gain amplifier

General Parameters

  • Type
    Low Noise Amplifier, Variable Gain Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, Radio
  • Standards Supported
    3G, LTE
  • Industry Application
    Wireless Infrastructure, Cellular
  • Frequency
    1.71 to 1.785 GHz
  • Power Gain
    13.3 to 37.2 dB
  • Gain Flatness
    ± 0.3 dB
  • Noise Figure
    0.77 dB
  • P1dB
    -14 to -6.1 dBm
  • P1dB
    0.00025 W
  • IP3
    1 dBm
  • IP3
    0.0012 W
  • Input Power
    10 to 15 dBm
  • Input Power
    0.01 to 0.03 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    19.3 to 24.9 dB
  • Output Return Loss
    17.3 to 17.5 dB
  • Supply Voltage
    0 to 6 V
  • Current Consumption
    Supply current: 190 to 250 mA
  • Transistor Technology
    GaAs, PHEMT, SiGe:C
  • Technology
    GaAs, PHEMT, SiGe:C
  • Package Type
    Surface Mount
  • Package
    SOT1301
  • Storage Temperature
    -40 to 150 Degree C

Technical Documents

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