The BTS6201U from NXP semiconductors is a 5G Massive MIMO Pre-driver Amplifier that operates from 2.3 to 4.2 GHz. It delivers an output power of 27 dBm with a power gain of 30.5 dB and has a noise figure of 3.4 dB. The amplifier is based on SiGe technology and has a programmable bias current with fast switching to support TDD systems. It requires a DC supply of 5V and has ESD protection on all terminals. This amplifier is available in a 16-terminal HVQFN package that measures 3.00 x 3.00 x 0.85 mm and is ideal for wireless infrastructure for 5G NR mMIMO, TDD systems, and high linearity pre-driver applications.

Product Specifications

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Product Details

  • Part Number
    BTS6201U
  • Manufacturer
    NXP Semiconductors
  • Description
    5G Massive MIMO Pre-driver Amplifier from 2.3 to 4.2 GHz

General Parameters

  • Type
    Pre-Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    5G, Wireless Infrastructure
  • Standards Supported
    5G
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    2.3 to 4.2 GHz
  • Gain
    29.5 to 31.5 dB
  • Power Gain
    29.5 to 31.5 dB
  • Gain Flatness
    0.7 to 1 dB
  • Noise Figure
    3.4 to 3.5 dB
  • Output Power
    27 dBm
  • Output Power
    0.5012 W
  • Grade
    Commercial
  • IP3
    35 dBm
  • IP3
    3.1623 W
  • Class
    Class A
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    45 dB
  • Input Return Loss
    17 dB
  • Output Return Loss
    12 dB
  • Supply Voltage
    4.75 to 5.25 V
  • Current Consumption
    78 mA
  • Technology
    SiGe
  • Package Type
    Surface Mount
  • Package
    HVQFN
  • Dimensions
    3 x 3 x 0.85 mm
  • Storage Temperature
    -40 to 150 Degree
  • RoHS
    Yes

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