The MMG3012NT1 from NXP Semiconductors is a RF Amplifier with Frequency 1 MHz to 6 GHz, Power Gain 19 dB, Small Signal Gain 13.4 to 19 dB, Noise Figure 3.8 dB, P1dB 18.5 dBm. Tags: Surface Mount, Power Amplifier. More details for MMG3012NT1 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MMG3012NT1
    • Manufacturer :
      NXP Semiconductors
    • Description :
      InGaP HBT GPA, 0 6000 MHz, 19 dB, 18.5 dBm

    General Parameters

    • Type :
      Power Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Standards Supported :
      PCS, WLL, VHF Band, UHF Band, UMTS
    • Industry Application :
      Cellular
    • Frequency :
      1 MHz to 6 GHz
    • Power Gain :
      19 dB
    • Small Signal Gain :
      13.4 to 19 dB
    • Noise Figure :
      3.8 dB
    • P1dB :
      18.5 dBm
    • P1dB :
      0.07 W
    • IP3 :
      31 to 34 dBm
    • IP3 :
      1.25 to 2.5 W
    • Input Power :
      25 dBm
    • Input Power :
      0.32 W
    • Class :
      Class A
    • Impedance :
      50 Ohms
    • Pulsed/CW :
      CW
    • Sub-Category :
      Linear Amplifier
    • Input Return Loss :
      -20 to -17 dB
    • Output Return Loss :
      -18 to -12 dB
    • Supply Voltage :
      5 V
    • Current Consumption :
      Supply current: 70 mA
    • Transistor Technology :
      InGaP, HBT
    • Technology :
      InGaP, HBT
    • Package Type :
      Surface Mount
    • Package :
      SOT-89
    • Storage Temperature :
      -65 to 150 Degree C
    • RoHS :
      Yes

    Technical Documents

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