The MMZ09312BT1 from NXP Semiconductors is a RF Amplifier with Frequency 400 MHz to 1 GHz, Power Gain 31.7 dB, Small Signal Gain 24.5 to 26 dB, Noise Figure 4 dB, P1dB 29.6 dBm. Tags: Surface Mount, Driver Amplifier, Power Amplifier. More details for MMZ09312BT1 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MMZ09312BT1
    • Manufacturer :
      NXP Semiconductors
    • Description :
      InGaP HBT Linear Amplifier, 400 -1000 MHz, 31.7 dB, 29.6 dBm

    General Parameters

    • Type :
      Driver Amplifier, Power Amplifier
    • Configuration :
      IC/MMIC/SMT
    • Standards Supported :
      CDMA, GSM, LTE
    • Frequency :
      400 MHz to 1 GHz
    • Power Gain :
      31.7 dB
    • Small Signal Gain :
      24.5 to 26 dB
    • Noise Figure :
      4 dB
    • P1dB :
      29.6 dBm
    • P1dB :
      0.91 W
    • Input Power :
      30 dBm
    • Input Power :
      1 W
    • Class :
      Class AB
    • Impedance :
      50 Ohms
    • Input Return Loss :
      -14 to -12 dB
    • Output Return Loss :
      -15 to -11 dB
    • Supply Voltage :
      3.0 to 5.0 V
    • Current Consumption :
      Supply current: 110 to 138 mA
    • Transistor Technology :
      InGaP, HBT
    • Technology :
      InGaP, HBT
    • Package Type :
      Surface Mount
    • Package :
      QFN 3 x 3
    • Storage Temperature :
      -65 to 150 Degree C
    • RoHS :
      Yes

    Technical Documents

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