The MWE6IC9100N from NXP Semiconductors is a RF Amplifier with Frequency 865 to 960 MHz, Gain 33.5 dB at 33.5 MHz, P1dB 50.5 dBm, P1dB 112.2019 W, Supply Voltage 26 V. Tags: Power Amplifier. More details for MWE6IC9100N can be seen below.

Product Specifications

  • Part Number
    MWE6IC9100N
  • Manufacturer
    NXP Semiconductors
  • Description
    865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers
  • Type
  • Configuration
    IC / MMIC
  • Application
    Commercial, Cellular
  • Standards Supported
    GSM, EDGE
  • Frequency
    865 to 960 MHz
  • Gain
    33.5 dB at 33.5 MHz
  • P1dB
    50.5 dBm
  • P1dB
    112.2019 W
  • Supply Voltage
    26 V
  • Technology
    LDMOS
  • Package Type
    Surface Mount
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.